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Crystal是Green Island，N.Y.，已被分配由七个共同发明人开发的专利（8,222,650），用于“氮化物半导体异质结构和相关方法”。The co-inventors are Leo J. Schowalter, Latham, N.Y., Joseph A. Smart, Mooresville, N.C., Shiwen Liu, Acton, Mass., Kenneth E. Morgan, Castleton, N.Y., Robert T. Bondokov, Watervliet, N.Y., Timothy J. Bettles, Rexford, N.Y., and Glen A. Slack, Scotia, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10^6.厘米^-2。专利申请于2009年11月12日提交（12/617,150）。